Intermixing of InGaAs/GaAs quantum wells and quantum dots using sputter-deposited silicon oxynitride capping layers
Various approaches can be used to selectively control the amount of intermixing in III-Vquantum well and quantum dotstructures. Impurity-free vacancy disordering is one technique that is favored for its simplicity, however this mechanism is sensitive to many experimental parameters. In this study, a series of silicon oxynitride capping layers have been used in the intermixing of InGaAs/GaAs quantum well and quantum dotstructures. These thin films were deposited by sputter deposition in order to...[Show more]
|Collections||ANU Research Publications|
|Source:||Journal of Applied Physics|
|01_McKerracher_Intermixing_of_InGaAs/GaAs_2012.pdf||Published Version||997.17 kB||Adobe PDF|
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