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Intermixing of InGaAs/GaAs quantum wells and quantum dots using sputter-deposited silicon oxynitride capping layers

McKerracher, Ian; Fu, Lan; Hoe Tan, Hark; Jagadish, Chennupati

Description

Various approaches can be used to selectively control the amount of intermixing in III-Vquantum well and quantum dotstructures. Impurity-free vacancy disordering is one technique that is favored for its simplicity, however this mechanism is sensitive to many experimental parameters. In this study, a series of silicon oxynitride capping layers have been used in the intermixing of InGaAs/GaAs quantum well and quantum dotstructures. These thin films were deposited by sputter deposition in order to...[Show more]

CollectionsANU Research Publications
Date published: 2012-12-06
Type: Journal article
URI: http://hdl.handle.net/1885/15573
Source: Journal of Applied Physics
DOI: 10.1063/1.4768283

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