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Polarity driven simultaneous growth of free-standing and lateral GaAsP epitaxial nanowires on GaAs (001) substrate

Sun, Wen; Guo, Yanan; Xu, Hongyi; Gao, Qiang; Hoe Tan, Hark; Jagadish, Chennupati; Zou, Jin

Description

Simultaneous growth of <111> free-standing and 6[110] lateral GaAsP epitaxial nanowires on GaAs (001) substrates were observed and investigated by electron microscopy and crystallographic analysis. It was found that the growth of both free-standing and lateral ternary nanowires via Au catalysts was driven by the fact that Au catalysts prefer to maintain low-energy {111}B interfaces with surrounding GaAs(P) materials: in the case of free-standing nanowires, Au catalysts maintain {111}B...[Show more]

CollectionsANU Research Publications
Date published: 2013-11-25
Type: Journal article
URI: http://hdl.handle.net/1885/15570
Source: Applied Physics Letters
DOI: 10.1063/1.4834377

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