Hydrogen refinement during solid phase epitaxy of buried amorphous silicon layers
The effect of hydrogen on the kinetics of solid phase epitaxy (SPE) have been studied in buried amorphous Si layers. The crystallization rate of the front amorphous/crystalline (a/c) interface is monitored with time resolved reflectivity.Secondary ion mass spectrometry(SIMS) is used to examine H implanted profiles at selected stages of the anneals. The H retardation of the SPE rate is determined up to a H concentration of 2.3×10²⁰ cm¯³ where the SPE rate decreases by 80%. Numerical simulations...[Show more]
|Collections||ANU Research Publications|
|Source:||Journal of Applied Physics|
|01_Pyke_Hydrogen_refinement_during_2010.pdf||Published Version||712.89 kB||Adobe PDF|
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