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Hydrogen refinement during solid phase epitaxy of buried amorphous silicon layers

Pyke, D. J; McCallum, Jeffrey C; Johnson, B. C


The effect of hydrogen on the kinetics of solid phase epitaxy (SPE) have been studied in buried amorphous Si layers. The crystallization rate of the front amorphous/crystalline (a/c) interface is monitored with time resolved reflectivity.Secondary ion mass spectrometry(SIMS) is used to examine H implanted profiles at selected stages of the anneals. The H retardation of the SPE rate is determined up to a H concentration of 2.3×10²⁰ cm¯³ where the SPE rate decreases by 80%. Numerical simulations...[Show more]

CollectionsANU Research Publications
Date published: 2010
Type: Journal article
Source: Journal of Applied Physics
DOI: 10.1063/1.3465547


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