Dislocations in laser-doped silicon detected by micro-photoluminescence spectroscopy
We report the detection of laser-induced damage in laser-doped layers at the surface of crystalline silicon wafers, via micron-scale photoluminescence spectroscopy. The properties of the sub-band-gap emission from the induced defects are found to match the emission characteristics of dislocations. Courtesy of the high spatial resolution of the micro-photoluminescence spectroscopy technique, micron-scale variations in the extent of damage at the edge of the laser-doped region can be detected,...[Show more]
|Collections||ANU Research Publications|
|Source:||Applied Physics Letters|
|Nguyen et al Dislocations in Laser-doped Silicon Detected 2015.pdf||1.07 MB||Adobe PDF|
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