High efficiency n-type silicon solar cells featuring passivated contact to laser doped regions
Minimizing carrier recombination at cell contacts becomes increasingly important for reaching high efficiency. In this work, the passivated contact concept is implemented into n-type silicon solar cells with laser-processed local back surface fields. The passivation and contact characteristics of the SiO2/amorphous silicon (a-Si:H) stack on localized laser doped n+ regions are investigated. We find that the SiO2/a-Si:H stack provides not only good passivation to laser doped n+ regions but also...[Show more]
|Collections||ANU Research Publications|
|Source:||Applied Physics Letters|
|Yang et al High Efficienty n-type Silicon 2015.pdf||841.99 kB||Adobe PDF|
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