Enhanced luminescence from GaN nanopillar arrays fabricated using a top-down process
We report the fabrication of GaN nanopillar arrays with good structural uniformity using the top-down approach. The photoluminescence intensity from the nanopillar arrays is enhanced compared to the epilayer. We use finite difference time domain simulations to show that the enhancement in photoluminescence intensity from the nanopillar arrays is a result of anti-reflection properties of the arrays that result in enhanced light absorption and increase light extraction efficiency compared to the...[Show more]
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