Advances in ion beam modification of semiconductors
Date
2015
Authors
Elliman, R.G.
Williams, J.S.
Journal Title
Journal ISSN
Volume Title
Publisher
Elsevier
Abstract
This review provides an overview of the current status of ion-implantation research in silicon, germanium
and the compound semiconductors SiC, GaN and ZnO. The discussion of silicon includes recent
developments in metrology and device simulation, as well as a brief discussion of emerging applications
in photovoltaics and quantum electronics. That of Ge includes a more detailed overview of doping, radiation
damage and annealing processes due to the renewed research interest in this material. Finally, the
discussion of compound semiconductors focuses on the newer wide bandgap materials where there are
remaining implantation issues to be solved and potentially new implantation applications emerging.
Description
Keywords
Ion implantation, Semiconductor, Silicon, Germanium, Silicon carbide, Zinc oxide, Gallium nitride
Citation
Collections
Source
Current Opinion in Solid State and Materials Science
Type
Journal article