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Advances in ion beam modification of semiconductors

Elliman, R.G.; Williams, J.S.

Description

This review provides an overview of the current status of ion-implantation research in silicon, germanium and the compound semiconductors SiC, GaN and ZnO. The discussion of silicon includes recent developments in metrology and device simulation, as well as a brief discussion of emerging applications in photovoltaics and quantum electronics. That of Ge includes a more detailed overview of doping, radiation damage and annealing processes due to the renewed research interest in this material....[Show more]

CollectionsANU Research Publications
Date published: 2015
Type: Journal article
URI: http://hdl.handle.net/1885/12865
Source: Current Opinion in Solid State and Materials Science
DOI: 10.1016/j.cossms.2014.11.007

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