The feasibility of Sn, In, or Al doped ZnSb thin film as candidates for phase change material
Date
2016
Authors
Chen, Yimin
Shen, Xiang
Wang, Guoxiang
Xu, Tiefeng
Wang, Rongping
Dai, Shixun
Nie, Qiuhua
Journal Title
Journal ISSN
Volume Title
Publisher
AIP Publishing
Abstract
The potentials of Sn, In, or Al doped ZnSb thin film as candidates for phase change materials have been studied in this paper. It was found that the Zn-Sb bonds were broken by the addition of the dopants and homopolar Zn-Zn bonds and other heteropolar bonds, such as Sn-Sb, In-Sb, and Al-Sb, were subsequently formed. The existence of homopolar Sn-Sn and In-In bonds in
Zn₅₀Sb₃₆Sn₁₄ and Zn₄₁Sb₃₆In₂₃ films, but no any Al-Al bonds in Zn₃₅Sb₃₀Al₃₅ film, was confirmed. All these three amorphous films crystallize with the appearance of crystalline rhombohedral Sb phase, and Zn₃₅Sb₃₅Al₃₅ film even exhibits a second crystallization process where the crystalline AlSb phase is separated out. The Zn₃₅Sb₃₀Al₃₅ film exhibits a reversible phase change behavior with a larger Ea ( 4.7 eV), higher Tc (~ 245ᴼ C), better 10-yr data retention (~ 182ᴼ C), less incubation time (20 ns at 70 mW), and faster complete crystallization speed (45 ns at 70 mW). Moreover,
Zn₃₅Sb₃₀Al₃₅ film shows the smaller root-mean-square (1.654 nm) and less change of the thickness between amorphous and crystalline state (7.5%), which are in favor of improving the reliability of phase change memory.
Description
Keywords
Sn, In, Al, ZnSb, film, phase, change, material, bond, dopants, homopolar, Zn-Zn bonds, heteropolar bonds, Sn-Sn, In-In, Zn₅₀Sb₃₆Sn₁₄, Zn₄₁Sb₃₆In₂₃, Zn₃₅Sb₃₀Al₃₅
Citation
Collections
Source
Journal of Applied Physics
Type
Journal article
Book Title
Entity type
Access Statement
Open Access
License Rights
Restricted until
Downloads
File
Description