Structural and electrical properties of In-implanted Ge
Date
2015
Authors
Feng, Ruixing
Kremer, Felipe
Sprouster, D. J.
Mirzaei, Sahar
Decoster, Stefan
Glover, Chris
Medling, Scott
Russo, Salvy P
Ridgway, Mark C
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American Institute of Physics (AIP)
Abstract
We report on the effects of dopant concentration on the structural and electrical properties of In-implanted Ge. For In concentrations of ≤ 0.2 at. %, extended x-ray absorption fine structure and x-ray absorption near-edge structure measurements demonstrate that all In atoms occupy a substitutional lattice site while metallic In precipitates are apparent in transmission electron micrographs for In concentrations ≥0.6 at. %. Evidence of the formation of In-vacancy complexes deduced from extended x-ray absorption fine structure measurements is complimented by density functional theory simulations. Hall effect measurements of the conductivity, carrier density, and carrier mobility are then correlated with the substitutional In fraction.
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Journal of Applied Physics
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Journal article
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Open Access
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