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Thermally Stable Epiwafers for PV Applications

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Date

2026-01-20

Authors

Basnet, Rabin
Winter, Clemens
Bein, Nicole
Heilig, Matthias
siebke, Frank
Vescavo, Giuliano
MacDonald, Daniel

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Research Projects

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Abstract

This work assesses the thermal stability of n-type Epiwafers after a boron diffusion based on the carrier lifetime measurements and photoluminescence images. The Epiwafers show a high bulk quality (iVoc > 735-745 mV) in their initial state after passivation with PECVD SiNx:H films. After a customized thermal budget for boron diffusion, the Epiwafers did not show any significant degradation, suggesting their high thermal stability. In contrast, some n-type Czochralski (nCz) silicon control samples degraded significantly (∆i Voc = -30 mV) due to the formation of ring defects during boron diffusion.

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Keywords

Boron-Diffusion, Epiwafers, Thermal-Stability

Citation

URI

https://hdl.handle.net/1885/733811763

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ANU Research Publications

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Type

Conference paper

Book Title

SiliconPV 2025, 15th International Conference on Crystalline Silicon Photovoltaics

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Publication

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DOI

10.52825/siliconpv.v3i.2690

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