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Cathodoluminescence and photoluminescence of crystaline silicon-epilayer grown on Si<sup>+</sup>-implanted (1-102) sapphire

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dc.contributor.authorPark, C. J.en
dc.contributor.authorKwon, Y. H.en
dc.contributor.authorKang, T. W.en
dc.contributor.authorCho, H. Y.en
dc.contributor.authorChoi, S. H.en
dc.contributor.authorElliman, R. G.en
dc.date.accessioned2026-01-01T15:42:23Z
dc.date.available2026-01-01T15:42:23Z
dc.date.issued2002en
dc.description.abstractLuminescence on Si-epitaxial layers grown on Si-implated Al2O3 (11̄02) with 30 kev Si+ to a dose of 5×1015/cm2 has been investigated. To active the implanted Si+ ions in Al2O3, the post annealing was performed at 1100°C in Ar ambiant. Also, cathodoluminescence (CL) and photoluminescence (PL) have been used to study struc Al2O3tural and optical properties of nc-Si in the Si+-implanted (11̄02) Al2O3 substrates. In the PL and CL spectra for Si+-implanted samples, peaks to be responsible for nanocrystalline-Si (nc-Si) appear at 316 nm (3.92 eV) and 574 nm (2.16 eV), respectively. The crystallinity of nc-Si imbeded in Al2O3 has been about 5nm in size and the dislocation aligned parallel to the (0001) planes of (11̄02) Al2O3, confirmed by transmission electron microscopy (TEM).en
dc.description.statusPeer-revieweden
dc.format.extent6en
dc.identifier.issn0272-9172en
dc.identifier.otherORCID:/0000-0002-1304-4219/work/167651155en
dc.identifier.scopus0036454397en
dc.identifier.urihttps://hdl.handle.net/1885/733801439
dc.language.isoenen
dc.relation.ispartofseriesMaterials and Devices for Optoelectronics and Microphotonicsen
dc.sourceMaterials Research Society Symposium - Proceedingsen
dc.titleCathodoluminescence and photoluminescence of crystaline silicon-epilayer grown on Si<sup>+</sup>-implanted (1-102) sapphireen
dc.typeConference paperen
dspace.entity.typePublicationen
local.bibliographicCitation.lastpage250en
local.bibliographicCitation.startpage245en
local.contributor.affiliationPark, C. J.; Dongguk Universityen
local.contributor.affiliationKwon, Y. H.; Dongguk Universityen
local.contributor.affiliationKang, T. W.; Dongguk Universityen
local.contributor.affiliationCho, H. Y.; Dongguk Universityen
local.contributor.affiliationChoi, S. H.; Kyung Hee Universityen
local.contributor.affiliationElliman, R. G.; Department of Electronic Materials Engineering, Research School of Physics, ANU College of Science and Medicine, The Australian National Universityen
local.identifier.citationvolume722en
local.identifier.doi10.1557/proc-722-k9.6en
local.identifier.pure10c65564-6326-41c9-a7eb-937f129373f9en
local.identifier.urlhttps://www.scopus.com/pages/publications/0036454397en
local.type.statusPublisheden

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