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The influence of implanted impurities on the thermally-induced epitaxial recrystallization of CoSi<sub>2</sub>

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dc.contributor.authorRidgway, M. C.en
dc.contributor.authorElliman, R. G.en
dc.contributor.authorPetravic, M.en
dc.contributor.authorThornton, R. P.en
dc.contributor.authorWilliams, J. S.en
dc.date.accessioned2026-01-03T12:41:30Z
dc.date.available2026-01-03T12:41:30Z
dc.date.issued1991en
dc.description.abstractThe influence of implanted impurities (B, O, P, Ar, Xe, Pb, and Bi) on the rate of low-temperature (138 °C), solid-phase epitaxial growth (SPEG) of amorphized CoSi2 has been studied. SPEG rates of impurity-implanted CoSi2, as determined from time-resolved reflectivity measurements, were retarded for all impurities compared to that of Si-implanted CoSi2. The extent of retardation varied from a factor of 1.5 for P to 9.4 for Xe. Channeling measurements of impurity-implanted CoSi2 indicated that Xe and Bi atoms were located on nonsubstitutional lattice sites while —40% of Pb atoms occupied either substitutional sites or vacant interstitial cation sites following annealing. The presence of impurities did not affect the CoSi2 post-anneal crystalline quality, and no significant impurity diffusion was apparent at 138 °C from secondary-ion mass spectrometry measurements.en
dc.description.sponsorshipWe are grateful to R. Loccisano for assistance in preparing the samples and P. Bond and D. Duckworth for assistance in operating the ion implanter. The financial support of the Australian Research Council and the Australian Special Research Centres Scheme is acknowledged.en
dc.description.statusPeer-revieweden
dc.format.extent5en
dc.identifier.issn0884-2914en
dc.identifier.otherORCID:/0000-0002-1304-4219/work/167651084en
dc.identifier.scopus0026152534en
dc.identifier.urihttps://hdl.handle.net/1885/733803425
dc.language.isoenen
dc.sourceJournal of Materials Researchen
dc.titleThe influence of implanted impurities on the thermally-induced epitaxial recrystallization of CoSi<sub>2</sub> en
dc.typeJournal articleen
dspace.entity.typePublicationen
local.bibliographicCitation.lastpage1039en
local.bibliographicCitation.startpage1035en
local.contributor.affiliationRidgway, M. C.; Department of Electronic Materials Engineering, Research School of Physics, ANU College of Science and Medicine, The Australian National Universityen
local.contributor.affiliationElliman, R. G.; Department of Electronic Materials Engineering, Research School of Physics, ANU College of Science and Medicine, The Australian National Universityen
local.contributor.affiliationPetravic, M.; Department of Electronic Materials Engineering, Research School of Physics, ANU College of Science and Medicine, The Australian National Universityen
local.contributor.affiliationThornton, R. P.; Royal Melbourne Institute of Technology Universityen
local.contributor.affiliationWilliams, J. S.; Department of Electronic Materials Engineering, Research School of Physics, ANU College of Science and Medicine, The Australian National Universityen
local.identifier.citationvolume6en
local.identifier.doi10.1557/JMR.1991.1035en
local.identifier.purec7c8c07e-285b-4f96-9134-f154423d396den
local.identifier.urlhttps://www.scopus.com/pages/publications/0026152534en
local.type.statusPublisheden

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