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Ion beam induced epitaxial crystallization of NiSi<sub>2</sub>

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Date

1990

Authors

Ridgway, M. C.
Elliman, R. G.
Williams, J. S.

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Abstract

Ion beam induced epitaxial crystallization of amorphous NiSi2 is reported. Epitaxial NiSi2 layers on (111) Si substrates were implanted at ∼-196 °C with low-energy Si ions to form an amorphous surface layer. The recrystallization of amorphous NiSi2 was induced at 13-58 °C by irradiating with high-energy Si or Ne ions. Recrystallization proceeded in a layer-by-layer manner from the original amorphous/crystalline interface with an activation energy of 0.26±0.07 eV.

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https://hdl.handle.net/1885/733803411

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ANU Research Publications

Source

Applied Physics Letters

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Journal article

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DOI

10.1063/1.102989

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