Ion beam induced epitaxial crystallization of NiSi2

Abstract

Ion beam induced epitaxial crystallization of amorphous NiSi2 is reported. Epitaxial NiSi2 layers on (111) Si substrates were implanted at ∼-196 °C with low-energy Si ions to form an amorphous surface layer. The recrystallization of amorphous NiSi2 was induced at 13-58 °C by irradiating with high-energy Si or Ne ions. Recrystallization proceeded in a layer-by-layer manner from the original amorphous/crystalline interface with an activation energy of 0.26±0.07 eV. Show more