Photoluminescence properties of Er doped AS2S3 films deposited using RF co-sputtering and the impact of rapid thermal annealing
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Latif, Huma
Yan, Kunlun
Madden, Steve
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SPIE
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Abstract
This work reports the photoluminescence (PL) properties of Er doped AS2S3 films (at 0.1 mol% concentration) fabricated by RF co-sputtering. As sputtered films are shown to exhibit PL degradation only on exposure to the combination of green light and water vapour due to photo-incorporation of OH groups through film nanostructural pores. Rapid Thermal Annealing is investigated as a possible remedy to this issue.
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AOS Australian Conference on Optical Fibre Technology, ACOFT 2019 and Australian Conference on Optics, Lasers, and Spectroscopy, ACOLS 2019
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