THERMAL REDISTRIBUTION OF INDIUM IN AMORPHOUS SILICON LAYERS.
| dc.contributor.author | Elliman, R. G. | en |
| dc.date.accessioned | 2026-01-03T12:40:44Z | |
| dc.date.available | 2026-01-03T12:40:44Z | |
| dc.date.issued | 1981 | en |
| dc.description.abstract | A new impurity redistribution mechanism is reported for low temperature annealing (525 degree C) of (100) Si samples implanted with high indium doses. The redistribution is a strong function of implant dose and is believed to be stress related. | en |
| dc.description.status | Peer-reviewed | en |
| dc.format.extent | 7 | en |
| dc.identifier.issn | 0142-2448 | en |
| dc.identifier.other | ORCID:/0000-0002-1304-4219/work/167651101 | en |
| dc.identifier.scopus | 0019755186 | en |
| dc.identifier.uri | https://hdl.handle.net/1885/733803363 | |
| dc.language.iso | en | en |
| dc.source | Radiation effects letters | en |
| dc.title | THERMAL REDISTRIBUTION OF INDIUM IN AMORPHOUS SILICON LAYERS. | en |
| dc.type | Journal article | en |
| dspace.entity.type | Publication | en |
| local.bibliographicCitation.lastpage | 83 | en |
| local.bibliographicCitation.startpage | 77 | en |
| local.contributor.affiliation | Elliman, R. G.; Department of Electronic Materials Engineering, Research School of Physics, ANU College of Science and Medicine, The Australian National University | en |
| local.identifier.citationvolume | 63 | en |
| local.identifier.pure | 5fe3aa60-6309-4a57-b7f5-5519c49bfd01 | en |
| local.identifier.url | https://www.scopus.com/pages/publications/0019755186 | en |
| local.type.status | Published | en |