Tunable photoresponse in InAs nanowire photodetectors through surface-state engineering
Date
Authors
Alexander-Webber, J. A.
Groschner, C. K.
Sagade, A. A.
Hofmann, S.
Tan, H. H.
Jagadish, C.
Joyce, H. J.
Journal Title
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Volume Title
Publisher
Optica Publishing Group
Access Statement
Abstract
We report on individual-InAs nanowire optoelectronic devices which, through surfacestate engineering, can be tailored to exhibit either negative- or positive-photoconductivity, opening pathways towards engineering semiconductor nanowires for novel optical-memory and photodetector applications.
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Citation
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Source
Type
Book Title
CLEO: Applications and Technology, CLEO_AT 2017
Entity type
Publication