Single step implant isolation of p<sup>+</sup>-InP using mev ion beams
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Ridgway, M. C.
Jagadish, C.
Elliman, R. G.
Hauser, N.
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Institute of Electrical and Electronics Engineers Inc.
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Abstract
Implant isolation of epitaxial p+-InP layers using a single, highenergy 0 implant, with a projected range several times that of the conductive layer, has been investigated. Results are compared with two alternative implant isolation schemes, with ion ranges confined to the epitaxial layer, - a multiple, low-energy O implant and a single, high-energy In implant. Single-step implant isolation offers considerable process simplification compared to conventional, multiple-implant sequences. Comparable sheet resistance values were achieved for the three different implant sequences, though the two schemes with ion ranges confined to the conductive layer yielded greater thermal stability. This difference is attributed to implantation-induced conduction in the semi-insulating substrate following the high-energy O implant.
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LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - 4th International Conference on Indium Phosphide and Related Materials, IPRM 1992
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