MeV ion-beam annealing of semiconductor structures
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Williams, J. S.
Ridgway, M. C.
Elliman, R. G.
Davies, J. A.
Johnson, S. T.
Palmer, G. R.
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Abstract
MeV heavy-ion beams have been used to induce epitaxial crystallization of amorphous Si, GaAs, InP, Ge-Si alloy and metal silicide layers. In all cases, the crystallization kinetics and the quality of the recrystallized layers have been compared with thermal-annealing behaviour. The most striking differences between the two annealing regimes (thermal and ion beam) have been observed for InP and high-dose In-implanted Si, where ion-beam annealing at low temperatures results in more extensive and higher-quality epitaxy than that achieved by thermal annealing.
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Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
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