MeV implantation into semiconductors
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Williams, J. S.
Elliman, R. G.
Ridgway, M. C.
Jagadish, C.
Ellingboe, S. L.
Goldberg, R.
Petravic, M.
Wong, W. C.
Dezhang, Z.
Nygren, E.
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Abstract
This paper reviews recent MeV implantation applications into semiconductors carried out at the Australian National University. Studies of damage, amorphization and dynamic defect annealing in silicon and GaAs/AlGaAs multilayer structures are emphasized, but selected examples of stopping measurements, diffusion, buried compound and alloy formation, electrical isolation and doping are also briefly treated. The particular advantages for solid state studies of controlling the nuclear energy deposition density distribution, and hence defect production, over large depths, are illustrated with appropriate examples.
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Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
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