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IMPLICATIONS OF THE SOLID-PHASE AMORPHOUS TO CRYSTALLINE TRANSFORMATION FOR SHALLOW-JUNCTION PROCESSING.

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Date

1986

Authors

Maher, D. M.
Seidel, T. E.
Williams, J. S.
Elliman, R. G.
Knoell, R. V.
Ellington, M. B.
Hull, R.
Jacobson, D. C.

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Abstract

Recent fundamental investigations of the solid-phase amorphous to crystalline transformation in silicon are reviewed. Three modes of inducing solid-phase regrowth are discussed, namely furnace processing, rapid-thermal processing and ion-beam processing. Topics emphasized include: extended defect states of the material; incubation solid-phase regrowth; continuous solid-phase regrowth; and the constraints which extended-defect annealling and dopant-profile broadening impose on obtaining n** plus and p** plus shallow junctions by a technology which is based on a preamorphization, dopant implant and solid-phase expitaxial regrowth sequence.

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https://hdl.handle.net/1885/733803360

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ANU Research Publications

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Proceedings - The Electrochemical Society

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Conference paper

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