Quantifying boron and phosphorous dopant concentrations in silicon from photoluminescence spectroscopy at 79 K

Abstract

Photoluminescence spectroscopy at 79 K is shown to provide an alternative, non-destructive characterisation method for quantifying the boron and phosphorous dopant concentrations in silicon. The dopant concentrations are revealed by the photoluminescence intensity ratios of the dopant-related features to the band-to-band recombination peaks. The intensity ratio is found to be insensitive to the excitation power in a wide range of 0.3 W cm−2–100 kW cm−2. Calibration curves for boron and phosphorous in silicon are presented for [B] below 5 × 1017 cm−3 and [P] below 8 × 1016 cm−3.