Plasma etching promoting the saturable absorption of BiOI
Date
Authors
Chen, Saiyi
Boukhvalov, Danil W.
Li, Hui
He, Miao
Gao, Xiangyun
Humphrey, Mark G.
Zhang, Chi
Huang, Zhipeng
Journal Title
Journal ISSN
Volume Title
Publisher
Access Statement
Abstract
Materials exhibiting exceptional saturable absorption performance and etching compatibility are significant in the context of advanced optical devices. Our study demonstrates that plasma etching can effectively promote the saturable absorption of BiOI nanosheets because of defect formation. Remarkably, the BiOI nanosheet subjected to the optimized H2/Ar-plasma treatment manifests a substantial nonlinear absorption coefficient (beta eff) of (-5.5 +/- 0.7) x 103 cm GW-1 under laser excitation at 800 nm, while the pristine BiOI sample exhibits no discernible nonlinear optical response. The beta eff of plasma-treated BiOI samples is (-4.2 +/- 0.9) x 103 cm GW-1 at 515 nm, surpassing that of the untreated counterpart by more than fourfold. A comprehensive structural and spectroscopic analysis indicates that oxygen vacancies serve to increase the density of in-gap states, thereby narrowing the bandgap of the BiOI. This reduced bandgap effectively facilitates the Pauli-blocking effect and, in turn, augments the saturable absorption properties of the samples. In contrast to oxygen vacancies, iodine vacancies make a negligible contribution to the performance enhancement of BiOI. Our result would provide a promising way to improve the nonlinear optical response of materials.
Description
Keywords
Citation
Collections
Source
Materials Today Chemistry
Type
Book Title
Entity type
Publication