Cultural advice

The Australian National University acknowledges, celebrates and pays our respects to the Ngunnawal and Ngambri people of the Canberra region and to all First Nations Australians on whose traditional lands we meet and work, and whose cultures are among the oldest continuing cultures in human history.

Aboriginal and Torres Strait Islander peoples are advised that ANU Library collections may include images, names, voices, and other representations of deceased persons.

Material in the collection may contain terms, language or views that reflect the period in which the item was created and may be considered inappropriate today.

Hyperdoping silicon beyond sulfur: Structural and electronic properties with metal dopants

Thumbnail Image

Date

2017-08-17

Authors

Warrender, Jeffrey M.
Mathews, Jay
Hudspeth, Quentin
Chow, Philippe K.
Yang, Wenjie
Akey, Austin J.
Williams, James S.

Journal Title

Journal ISSN

Volume Title

Publisher

Institute of Electrical and Electronics Engineers Inc.

Access Statement

Research Projects

Organizational Units

Journal Issue

Abstract

Hyperdoping silicon with transition metals offers the potential of subbandgap photodetection, but metal impurities can be difficult to kinetically trap. Instabilities during solidification introduce large length-scale defects. We present guidelines for avoiding these instabilities, and electronic properties for layers that do not exhibit them.

Description

Keywords

Citation

URI

https://hdl.handle.net/1885/733798255

Collections

ANU Research Publications

Source

Type

Conference paper

Book Title

Summer Topicals Meeting Series, SUM 2017

Entity type

Publication

Access Statement

License Rights

DOI

10.1109/PHOSST.2017.8012683

Restricted until

DSpace software copyright © 2002-2026 LYRASIS