Hyperdoping silicon beyond sulfur
Date
Authors
Warrender, Jeffrey M.
Mathews, Jay
Hudspeth, Quentin
Chow, Philippe K.
Yang, Wenjie
Akey, Austin J.
Williams, James S.
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Publisher
Institute of Electrical and Electronics Engineers Inc.
Access Statement
Abstract
Hyperdoping silicon with transition metals offers the potential of subbandgap photodetection, but metal impurities can be difficult to kinetically trap. Instabilities during solidification introduce large length-scale defects. We present guidelines for avoiding these instabilities, and electronic properties for layers that do not exhibit them.
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Source
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Book Title
Summer Topicals Meeting Series, SUM 2017
Entity type
Publication