Improved intermixing in GaAs/AlGaAs quantum well structures through repeated implant-anneal sequence

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dc.contributor.authorTan, H. H.en
dc.contributor.authorFu, L.en
dc.contributor.authorJohnston, M. B.en
dc.contributor.authorDao, L. V.en
dc.contributor.authorGal, M.en
dc.contributor.authorJagadish, C.en
dc.date.accessioned2025-12-31T17:42:09Z
dc.date.available2025-12-31T17:42:09Z
dc.date.issued1999en
dc.description.abstractIon (proton) implantation was used to induce intermixing in GaAs-AlGaAs quantum wells. Very large energy shifts (up to 160 meV) were observed after annealing. However, the energy shift was further improved with a repeated implant-anneal sequence. Up to about a factor of two increase in the energy shifts were obtained. This sequence was then used to fabricate laser diodes for multi-wavelength device integration. A remarkable improvement in the laser threshold characteristics was obtained with this sequence compared to a single implant.en
dc.description.statusPeer-revieweden
dc.format.extent4en
dc.identifier.otherORCID:/0000-0002-7816-537X/work/167653236en
dc.identifier.otherORCID:/0000-0002-9070-8373/work/167653438en
dc.identifier.otherORCID:/0000-0003-1528-9479/work/167653577en
dc.identifier.scopus0032691857en
dc.identifier.urihttps://hdl.handle.net/1885/733797579
dc.language.isoenen
dc.relation.ispartofseriesProceedings of the 1998 Conference on Optoelectronic and Microelectronic Materials and Devicesen
dc.titleImproved intermixing in GaAs/AlGaAs quantum well structures through repeated implant-anneal sequenceen
dc.typeConference paperen
dspace.entity.typePublicationen
local.bibliographicCitation.lastpage190en
local.bibliographicCitation.startpage187en
local.contributor.affiliationTan, H. H.; Department of Electronic Materials Engineering, Research School of Physics, ANU College of Science and Medicine, The Australian National Universityen
local.contributor.affiliationFu, L.; Department of Electronic Materials Engineering, Research School of Physics, ANU College of Science and Medicine, The Australian National Universityen
local.contributor.affiliationJohnston, M. B.; University of Sydneyen
local.contributor.affiliationDao, L. V.; University of Sydneyen
local.contributor.affiliationGal, M.; University of Sydneyen
local.contributor.affiliationJagadish, C.; Department of Electronic Materials Engineering, Research School of Physics, ANU College of Science and Medicine, The Australian National Universityen
local.identifier.ariespublicationU3488905xPUB16315en
local.identifier.doi10.1109/COMMAD.1998.791616en
local.identifier.pure50b25992-1e40-4063-9b08-abcc978189a0en
local.identifier.urlhttps://www.scopus.com/pages/publications/0032691857en
local.type.statusPublisheden

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