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High resolution imaging of the interfacial region in metal-insulator- semiconductor and Schottky diodes

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Date

1983

Authors

Green, Martin A.
Blakers, Andrew W.
Krivanek, Ondrej L.

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Research Projects

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Abstract

Interfacial oxides can greatly influence the properties of metal-semiconductor heterojunctions as demonstrated by recent work on metal-insulator-semiconductor solar cells. The physical structure of such interfacial regions is examined using High Resolution Electron Microscopy. Simultaneous imaging of the lattice structure on both sides of the interfacial region is reported for the first time.

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https://hdl.handle.net/1885/733803566

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ANU Research Publications

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Journal of Applied Physics

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Journal article

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DOI

10.1063/1.332289

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