Pulsed laser processing of poly(3,3⌄-didodecyl quarter thiophene) semiconductor for organic thin film transistors

dc.contributor.authorConstantinescu, C.en
dc.contributor.authorRapp, L.en
dc.contributor.authorRotaru, P.en
dc.contributor.authorDelaporte, P.en
dc.contributor.authorAlloncle, A. P.en
dc.date.accessioned2026-01-01T14:41:37Z
dc.date.available2026-01-01T14:41:37Z
dc.date.issued2015-04-01en
dc.description.abstractWe report on the growth of thin solid layers of poly(3,3⌄ didodecyl quater thiophene) (PQT-12) by matrix-assisted pulsed laser evaporation (MAPLE), on silicon and quartz substrates. The effects of PQT-12 solubilization in toluene, anisole, 1,2-dichlorobenzene, and a mixture of chlorobenzene and 1,2-dichlorobenzene, are discussed with respect to the MAPLE technique. Different film thicknesses have been grown, and their morphology and optical properties are presented. Thermal analysis studies have been realized to understand and explain the laser-induced photo-thermal effects on the organic semiconductor. Subsequently, micrometric-sized pixels of PQT-12 have been printed by laser-induced forward transfer (LIFT), with the goal to fabricate organic thin-film transistors (OTFT) devices. The influence of the donor films thickness and morphology, in LIFT experiments, is discussed. Electrical characterizations supplement this study, the resulting printed transistors are fully functional and provide field-effect mobility up to 5 × 10-3 cm2 · V-1 · s-1 together with current modulation of 106.en
dc.description.sponsorshipThe authors thank Dr. Christine Videlot-Ackermann for her help in measuring the electrical properties of the LIFT printed pixels. This work was partially supported (i.e. the MAPLE experiments) by a grant of the Romanian National Authority for Scientific Research , CNCS–UEFISCDI, project number PN-II-RU-TE-2011-3-0301 – acronym “TE-12”.en
dc.description.statusPeer-revieweden
dc.format.extent7en
dc.identifier.issn0301-0104en
dc.identifier.scopus84923224298en
dc.identifier.urihttps://hdl.handle.net/1885/733801038
dc.language.isoenen
dc.rightsPublisher Copyright: © 2015 Elsevier B.V. All rights reserved.en
dc.sourceChemical Physicsen
dc.subjectAtomic force microscopyen
dc.subjectOrganic compoundsen
dc.subjectPolymersen
dc.subjectSemiconductorsen
dc.subjectThermogravimetric analysisen
dc.subjectThin filmen
dc.titlePulsed laser processing of poly(3,3⌄-didodecyl quarter thiophene) semiconductor for organic thin film transistorsen
dc.typeJournal articleen
dspace.entity.typePublicationen
local.bibliographicCitation.lastpage38en
local.bibliographicCitation.startpage32en
local.contributor.affiliationConstantinescu, C.; Aix-Marseille Universitéen
local.contributor.affiliationRapp, L.; Aix-Marseille Universitéen
local.contributor.affiliationRotaru, P.; University of Craiovaen
local.contributor.affiliationDelaporte, P.; Aix-Marseille Universitéen
local.contributor.affiliationAlloncle, A. P.; Aix-Marseille Universitéen
local.identifier.citationvolume450-451en
local.identifier.doi10.1016/j.chemphys.2015.02.004en
local.identifier.pure57c46043-ef57-4716-81fd-3b02f33e15ffen
local.identifier.urlhttps://www.scopus.com/pages/publications/84923224298en
local.type.statusPublisheden

Downloads