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Quantum cascade lasers grown on silicon

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Date

2018-08-13

Authors

Baranov, A. N.
Nguyen-Van, H.
Loghmari, Z.
Cerutti, L.
Rodriguez, J. B.
Tournet, J.
Narcy, G.
Boissier, G.
Patriarche, G.
Bahriz, M.

Journal Title

Journal ISSN

Volume Title

Publisher

Institute of Electrical and Electronics Engineers Inc.

Access Statement

Research Projects

Organizational Units

Journal Issue

Abstract

We report the first quantum cascade lasers directly grown on a silicon substrate. These lasers are based on the InAs/AlSb material system and exhibit high performances, comparable with those of the devices fabricated on their native InAs substrate. The lasers operate near 11 μm, the longest emission wavelength of any laser integrated on Si.

Description

Keywords

Quantum cascade lasers, Silicon photonics

Citation

URI

https://hdl.handle.net/1885/733812382

Collections

ANU Research Publications

Source

Type

Conference paper

Book Title

Proceedings - International Conference Laser Optics 2018, ICLO 2018

Entity type

Publication

Access Statement

License Rights

DOI

10.1109/LO.2018.8435856

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