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Role of electronic processes in epitaxial recrystallization of amorphous semiconductors

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dc.contributor.authorWilliams, J. S.en
dc.contributor.authorElliman, R. G.en
dc.date.accessioned2026-01-03T12:41:22Z
dc.date.available2026-01-03T12:41:22Z
dc.date.issued1983en
dc.description.abstractA phenomenological model of the solid-phase epitaxial growth process is proposed to account for the influence of substrate orientation and doping on growth kinetics. The model combines structural features of the amorphous-crystalline interface with electronic processes related to changes in the Fermi level. The basic premise is that the concentration of kinklike growth sites at the interface, and hence the growth velocity, can be influenced by doping in a manner analogous to the enhancement of dislocation velocities by doping.en
dc.description.statusPeer-revieweden
dc.format.extent4en
dc.identifier.issn0031-9007en
dc.identifier.otherORCID:/0000-0002-1304-4219/work/167651059en
dc.identifier.scopus0012037293en
dc.identifier.urihttps://hdl.handle.net/1885/733803405
dc.language.isoenen
dc.sourcePhysical Review Lettersen
dc.titleRole of electronic processes in epitaxial recrystallization of amorphous semiconductorsen
dc.typeJournal articleen
dspace.entity.typePublicationen
local.bibliographicCitation.lastpage1072en
local.bibliographicCitation.startpage1069en
local.contributor.affiliationWilliams, J. S.; Royal Melbourne Institute of Technology Universityen
local.contributor.affiliationElliman, R. G.; CSIROen
local.identifier.citationvolume51en
local.identifier.doi10.1103/PhysRevLett.51.1069en
local.identifier.purec30342d8-f1fe-4396-bc20-2be70eae19f7en
local.identifier.urlhttps://www.scopus.com/pages/publications/0012037293en
local.type.statusPublisheden

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