Fabrication of high-speed electronic devices of ion-beam synthesis of Ge _XSi _1-X strained layers

Abstract

Ge XSi 1-X strained layers can be fabricated by Ge implantation and solid-phase epitaxy and can be used in electronic devices to improved their performance. Several important materials science issues are addressed, including the effect of the strain on solid-phase-epitaxy, the effect of oxidation on the implanted Ge distribution, and the effect of Ge on the oxidation rate of Si. The potential of this process is demonstrated by comparing the performance of metal-oxide-semiconductor field-effect-transistors (MOSFETs) employing ion-beam synthesised GeSi strained layer channel regions with that of Si-only devices.