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Single-step implant isolation of p<sup>+</sup>-InP with 5-MeV O ions

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dc.contributor.authorRidgway, M. C.en
dc.contributor.authorJagadish, C.en
dc.contributor.authorElliman, R. G.en
dc.contributor.authorHauser, N.en
dc.date.accessioned2026-01-03T12:41:58Z
dc.date.available2026-01-03T12:41:58Z
dc.date.issued1992en
dc.description.abstractThe applicability of a single, 5-MeV O implant for electrical isolation of epitaxial p+-InP layers on semi-insulating InP substrates has been investigated. For such an implant, the ion range is several times that of the epitaxial layer and, consequently, end-of-range disorder is buried deep within the substrate. Though sheet resistances of ∼5×106 Ω/sq were achieved, irradiation-induced conduction in the substrate limits the maximum sheet resistance attainable. The single, high-energy implant scheme has been compared with a multiple, low-energy implant sequence. For a given level of disorder in the epitaxial layer, the latter yields higher sheet-resistance values though the former offers significant process simplification.en
dc.description.statusPeer-revieweden
dc.format.extent3en
dc.identifier.issn0003-6951en
dc.identifier.otherORCID:/0000-0002-1304-4219/work/167651090en
dc.identifier.otherORCID:/0000-0003-1528-9479/work/167653573en
dc.identifier.scopus0037848835en
dc.identifier.urihttps://hdl.handle.net/1885/733803451
dc.language.isoenen
dc.sourceApplied Physics Lettersen
dc.titleSingle-step implant isolation of p<sup>+</sup>-InP with 5-MeV O ionsen
dc.typeJournal articleen
dspace.entity.typePublicationen
local.bibliographicCitation.lastpage3012en
local.bibliographicCitation.startpage3010en
local.contributor.affiliationRidgway, M. C.; Department of Electronic Materials Engineering, Research School of Physics, ANU College of Science and Medicine, The Australian National Universityen
local.contributor.affiliationJagadish, C.; Department of Electronic Materials Engineering, Research School of Physics, ANU College of Science and Medicine, The Australian National Universityen
local.contributor.affiliationElliman, R. G.; Department of Electronic Materials Engineering, Research School of Physics, ANU College of Science and Medicine, The Australian National Universityen
local.contributor.affiliationHauser, N.; Australian National Universityen
local.identifier.citationvolume60en
local.identifier.doi10.1063/1.106792en
local.identifier.pure0b615164-739f-4ead-88ac-a6cc0c0d0d1fen
local.identifier.urlhttps://www.scopus.com/pages/publications/0037848835en
local.type.statusPublisheden

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