Single-step implant isolation of p<sup>+</sup>-InP with 5-MeV O ions
| dc.contributor.author | Ridgway, M. C. | en |
| dc.contributor.author | Jagadish, C. | en |
| dc.contributor.author | Elliman, R. G. | en |
| dc.contributor.author | Hauser, N. | en |
| dc.date.accessioned | 2026-01-03T12:41:58Z | |
| dc.date.available | 2026-01-03T12:41:58Z | |
| dc.date.issued | 1992 | en |
| dc.description.abstract | The applicability of a single, 5-MeV O implant for electrical isolation of epitaxial p+-InP layers on semi-insulating InP substrates has been investigated. For such an implant, the ion range is several times that of the epitaxial layer and, consequently, end-of-range disorder is buried deep within the substrate. Though sheet resistances of ∼5×106 Ω/sq were achieved, irradiation-induced conduction in the substrate limits the maximum sheet resistance attainable. The single, high-energy implant scheme has been compared with a multiple, low-energy implant sequence. For a given level of disorder in the epitaxial layer, the latter yields higher sheet-resistance values though the former offers significant process simplification. | en |
| dc.description.status | Peer-reviewed | en |
| dc.format.extent | 3 | en |
| dc.identifier.issn | 0003-6951 | en |
| dc.identifier.other | ORCID:/0000-0002-1304-4219/work/167651090 | en |
| dc.identifier.other | ORCID:/0000-0003-1528-9479/work/167653573 | en |
| dc.identifier.scopus | 0037848835 | en |
| dc.identifier.uri | https://hdl.handle.net/1885/733803451 | |
| dc.language.iso | en | en |
| dc.source | Applied Physics Letters | en |
| dc.title | Single-step implant isolation of p<sup>+</sup>-InP with 5-MeV O ions | en |
| dc.type | Journal article | en |
| dspace.entity.type | Publication | en |
| local.bibliographicCitation.lastpage | 3012 | en |
| local.bibliographicCitation.startpage | 3010 | en |
| local.contributor.affiliation | Ridgway, M. C.; Department of Electronic Materials Engineering, Research School of Physics, ANU College of Science and Medicine, The Australian National University | en |
| local.contributor.affiliation | Jagadish, C.; Department of Electronic Materials Engineering, Research School of Physics, ANU College of Science and Medicine, The Australian National University | en |
| local.contributor.affiliation | Elliman, R. G.; Department of Electronic Materials Engineering, Research School of Physics, ANU College of Science and Medicine, The Australian National University | en |
| local.contributor.affiliation | Hauser, N.; Australian National University | en |
| local.identifier.citationvolume | 60 | en |
| local.identifier.doi | 10.1063/1.106792 | en |
| local.identifier.pure | 0b615164-739f-4ead-88ac-a6cc0c0d0d1f | en |
| local.identifier.url | https://www.scopus.com/pages/publications/0037848835 | en |
| local.type.status | Published | en |