Open Research will be unavailable from 10.15am - 11am on Saturday 14th March 2026 AEDT due to scheduled maintenance.
 

Nanowires for optoelectronic device applications

dc.contributor.authorGao, Q.en
dc.contributor.authorJoyce, H. J.en
dc.contributor.authorPaiman, S.en
dc.contributor.authorKang, J. H.en
dc.contributor.authorTan, H. H.en
dc.contributor.authorKim, Y.en
dc.contributor.authorSmith, L. M.en
dc.contributor.authorJackson, H. E.en
dc.contributor.authorYarrison-Rice, J. M.en
dc.contributor.authorZhang, X.en
dc.contributor.authorZou, J.en
dc.contributor.authorJagadish, C.en
dc.date.accessioned2025-06-10T23:39:16Z
dc.date.available2025-06-10T23:39:16Z
dc.date.issued2009en
dc.description.abstractGaAs and InP based nanowires were grown epitaxially on GaAs or InP (111)B substrates by metalorganic chemical vapor deposition using Au nanoparticles as catalyst. In this paper, we will give an overview of nanowire research activities in our group. In particular, the effects of growth parameters for GaAs and InP nanowires on the crystal quality were studied in detail. We demonstrated the ability to obtain defect-free GaAs nanowires via either two-temperature procedure, or by controlling V/III ratio or growth rate. The crystal structure of InP nanowires, ie, WZ or ZB, can also be engineered by just controlling the V/III ratio.en
dc.description.statusPeer-revieweden
dc.format.extent5en
dc.identifier.issn1862-6351en
dc.identifier.otherORCID:/0000-0002-7816-537X/work/162371650en
dc.identifier.otherORCID:/0000-0003-1528-9479/work/162373688en
dc.identifier.scopus77955463655en
dc.identifier.urihttp://www.scopus.com/inward/record.url?scp=77955463655&partnerID=8YFLogxKen
dc.identifier.urihttps://hdl.handle.net/1885/733758004
dc.language.isoenen
dc.relation.ispartofseries15th International Semiconducting and Insulating Materials Conference, SIMC-XVen
dc.sourcePhysica Status Solidi (C) Current Topics in Solid State Physicsen
dc.titleNanowires for optoelectronic device applicationsen
dc.typeConference paperen
dspace.entity.typePublicationen
local.bibliographicCitation.lastpage2682en
local.bibliographicCitation.startpage2678en
local.contributor.affiliationGao, Q.; Department of Electronic Materials Engineering, Research School of Physics, ANU College of Science and Medicine, The Australian National Universityen
local.contributor.affiliationJoyce, H. J.; Department of Electronic Materials Engineering, Research School of Physics, ANU College of Science and Medicine, The Australian National Universityen
local.contributor.affiliationPaiman, S.; Department of Electronic Materials Engineering, Research School of Physics, ANU College of Science and Medicine, The Australian National Universityen
local.contributor.affiliationKang, J. H.; Department of Electronic Materials Engineering, Research School of Physics, ANU College of Science and Medicine, The Australian National Universityen
local.contributor.affiliationTan, H. H.; Department of Electronic Materials Engineering, Research School of Physics, ANU College of Science and Medicine, The Australian National Universityen
local.contributor.affiliationKim, Y.; Dong-A Universityen
local.contributor.affiliationSmith, L. M.; University of Cincinnatien
local.contributor.affiliationJackson, H. E.; University of Cincinnatien
local.contributor.affiliationYarrison-Rice, J. M.; Miami Universityen
local.contributor.affiliationZhang, X.; University of Queenslanden
local.contributor.affiliationZou, J.; University of Queenslanden
local.contributor.affiliationJagadish, C.; Department of Electronic Materials Engineering, Research School of Physics, ANU College of Science and Medicine, The Australian National Universityen
local.identifier.ariespublicationU3488905xPUB237en
local.identifier.citationvolume6en
local.identifier.doi10.1002/pssc.200982528en
local.identifier.puread83cf29-c892-4fca-88c5-3f50eb8c8604en
local.identifier.urlhttps://www.scopus.com/pages/publications/77955463655en
local.type.statusPublisheden

Downloads