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The fabrication of SiGe/Si heterostructures by ion implantation and solid phase epitaxy

dc.contributor.authorWong, Wah Chung
dc.date.accessioned2018-09-11T06:44:26Z
dc.date.available2018-09-11T06:44:26Z
dc.date.copyright2000
dc.date.issued2000
dc.date.updated2018-08-30T23:56:03Z
dc.format.extentx, 146 leaves
dc.identifier.otherb2054404
dc.identifier.urihttp://hdl.handle.net/1885/147331
dc.language.isoen_AUen_AU
dc.subject.lccTK7871.85.W65 2000
dc.subject.lcshSemiconductors
dc.subject.lcshGermanium
dc.subject.lcshSilicon
dc.subject.lcshIon implantation
dc.subject.lcshEpitaxy
dc.titleThe fabrication of SiGe/Si heterostructures by ion implantation and solid phase epitaxyen_AU
dc.typeThesis (PhD)en_AU
dcterms.valid2000en_AU
local.description.notesThesis (Ph.D.)--Australian National University, 2000
local.identifier.doi10.25911/5d627083c0123
local.mintdoimint
local.type.degreeDoctor of Philosophy (PhD)en_AU

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