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Film stress in silicon dioxide deposited by helicon activated reactive evaporation

dc.contributor.authorAu, Vicky
dc.date.accessioned2018-11-22T00:08:46Z
dc.date.available2018-11-22T00:08:46Z
dc.date.copyright2005
dc.date.issued2005
dc.date.updated2018-11-21T11:53:44Z
dc.format.extentxviii, 166 p.
dc.identifier.otherb2278362
dc.identifier.urihttp://hdl.handle.net/1885/151642
dc.language.isoen_AUen_AU
dc.rightsAuthor retains copyrighten_AU
dc.subject.lccQC611.8.A5A9 2005
dc.subject.lcshSilica
dc.subject.lcshAmorphous substances
dc.subject.lcshThin films
dc.subject.lcshPlasma-enhanced chemical vapor deposition
dc.titleFilm stress in silicon dioxide deposited by helicon activated reactive evaporation
dc.typeThesis (PhD)en_AU
dcterms.accessRightsOpen Accessen_AU
local.description.notesThesis (Ph.D.)--Australian National University, 2005en_AU
local.identifier.doi10.25911/5d515310b4144
local.mintdoimint
local.type.statusAccepted Versionen_AU

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