Selective-Area Epitaxial Growth of In(Ga)As(P)/InP Quantum Well Nanowires for Optoelectronic Device Applications

Abstract

This dissertation presents the selective-area epitaxial (SAE) growth of In(Ga)As(P)/InP multiple quantum well (MQW) nanowires and related optoelectronic device applications. The effects of temperature and precursors flow ratio on nanowire growth are systematically investigated. High quality InP nanowire array can be achieved with different crystal structures and sidewall facets. Based on the WZ, mixed ZB/WZ and WZ core-shell InP nanowire, In(Ga)As(P)/InP MQW structures have been obtained with different morphology and QW coverage. With careful optimization, highly uniform InGaAs/InP MQWs (up to 40) can be achieved with excellent optical properties, leading to low-threshold optically pumped lasing at telecommunication wavelength at room temperature. Furthermore, InGaAs/InP single-QW nanowire array light emitting diodes (LEDs) have been demonstrated with multi-wavelength and GHz-level operation. And InGaAs/InP 40-QW nanowire array photodetectors have been demonstrated with high responsivity and high-speed operation at near-infrared range. Show more