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The gettering of metals in silicon to defects induced by ion implantation

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dc.contributor.authorWong-Leung, Jennifer
dc.date.accessioned2018-07-24T04:34:12Z
dc.date.available2018-07-24T04:34:12Z
dc.date.copyright1997
dc.date.issued1997
dc.date.updated2018-07-18T05:54:06Z
dc.format.extentxv, 137 leaves
dc.identifier.otherb1983672
dc.identifier.urihttp://hdl.handle.net/1885/145289
dc.language.isoen_AUen_AU
dc.subject.lcshSilicon
dc.subject.lcshSemiconductors Impurity distribution
dc.subject.lcshIon implantation
dc.titleThe gettering of metals in silicon to defects induced by ion implantationen_AU
dc.typeThesis (PhD)en_AU
dcterms.valid1997en_AU
local.description.notesThesis (Ph.D.)--Australian National University, 1997
local.identifier.doi10.25911/5d666a409a39d
local.mintdoimint
local.type.degreeDoctor of Philosophy (PhD)en_AU

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