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Yield strength of ion implanted Si

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dc.contributor.authorLakshmanasamy, Raghuveerasamy
dc.date.accessioned2018-11-22T00:07:03Z
dc.date.available2018-11-22T00:07:03Z
dc.date.copyright2007
dc.date.issued2007
dc.date.updated2018-11-21T05:09:02Z
dc.format.extentx, 62 leaves
dc.identifier.otherb2355226
dc.identifier.urihttp://hdl.handle.net/1885/150982
dc.language.isoen_AUen_AU
dc.rightsAuthor retains copyrighten_AU
dc.subject.lccTK7871.15.S55L35 2007
dc.subject.lcshSilicon
dc.subject.lcshIon implantation
dc.subject.lcshStrength of materials
dc.titleYield strength of ion implanted Si
dc.typeThesis (MPhil)en_AU
dcterms.accessRightsOpen Accessen_AU
local.description.notesThesis (M Phil)--Australian National University, 2007
local.identifier.doi10.25911/5d5e75139338d
local.mintdoimint
local.type.statusAccepted Versionen_AU

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