Comparison of quantum well intermixing in InGaAsP/InGaAs and A1InGaAs/InGaAs materials and devices

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dc.contributor.authorDu, Sichao
dc.date.accessioned2018-11-22T00:06:33Z
dc.date.available2018-11-22T00:06:33Z
dc.date.copyright2008
dc.date.issued2008
dc.date.updated2018-11-21T03:23:58Z
dc.format.extentxii, 73 leaves
dc.identifier.otherb2381377
dc.identifier.urihttp://hdl.handle.net/1885/150770
dc.language.isoen_AUen_AU
dc.rightsAuthor retains copyrighten_AU
dc.subject.lccQC176.8.Q35 D8 2008
dc.subject.lcshQuantum wells
dc.subject.lcshIon implantation
dc.subject.lcshOptoelectronic devices
dc.titleComparison of quantum well intermixing in InGaAsP/InGaAs and A1InGaAs/InGaAs materials and devices
dc.typeThesis (MPhil)en_AU
dcterms.accessRightsOpen Accessen_AU
local.description.notesThesis (M. Phil.)--Australian National University, 2008
local.identifier.doi10.25911/5d5154bf522fc
local.mintdoimint
local.type.statusAccepted Versionen_AU

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