The Impact of Atomic Hydrogen on the Properties of the Silicon/Silicon Dioxide Interface
Date
2010
Authors
Zhang, Chun
Journal Title
Journal ISSN
Volume Title
Publisher
Abstract
In this thesis, the influence of atomic hydrogen on the surface passivation of Si and SiO2 interface was mainly investigated. The effect of corona charging, humidity, UV exposure and mineral acid on Si and SiO2 interface was compared to the effect of atomic hydrogen. The electrical properties of thin, low temperature oxides, and in particular the degree of surface passivation achievable with such oxides, was also investigated and compared with the properties of oxides grown at higher temperatures. Both wet and dry oxidations were used...Immersion of oxidised silicon samples in mineral acids resulted in a modification to the Si and SiO2 interface properties. It could also provide a very cheap, alternative means of surface passivation due to hydrogen or a hydrogen complex diffusing into the oxide layer and affecting the interface properties.
Description
Keywords
silicon, silicon dioxide, interface, atomic hydrogen, passivation, solar cell
Citation
Collections
Source
Type
Thesis (PhD)
Book Title
Entity type
Access Statement
License Rights
Restricted until
Downloads
File
Description
front pages NOTE THIS THESIS IS EMBARGOED UNTIL 11 MAY 2012
whole thesis NOTE THIS THESIS IS EMBARGOED UNTIL 11 MAY 2012