The Impact of Atomic Hydrogen on the Properties of the Silicon/Silicon Dioxide Interface

Abstract

In this thesis, the influence of atomic hydrogen on the surface passivation of Si and SiO2 interface was mainly investigated. The effect of corona charging, humidity, UV exposure and mineral acid on Si and SiO2 interface was compared to the effect of atomic hydrogen. The electrical properties of thin, low temperature oxides, and in particular the degree of surface passivation achievable with such oxides, was also investigated and compared with the properties of oxides grown at higher temperatures. Both wet and dry oxidations were used...Immersion of oxidised silicon samples in mineral acids resulted in a modification to the Si and SiO2 interface properties. It could also provide a very cheap, alternative means of surface passivation due to hydrogen or a hydrogen complex diffusing into the oxide layer and affecting the interface properties. Show more