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Growth and characterisation of (In)GaAsN alloys for optoelectronic applications

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dc.contributor.authorGao, Qiang
dc.date.accessioned2018-11-01T22:33:01Z
dc.date.available2018-11-01T22:33:01Z
dc.date.copyright2004
dc.date.issued2004
dc.date.updated2018-09-21T01:36:19Z
dc.format.extentx, 164 leaves
dc.identifier.otherb2212498
dc.identifier.urihttp://hdl.handle.net/1885/148792
dc.language.isoen_AUen_AU
dc.subject.lccQC611.8.G3G36 2004
dc.subject.lcshGallium compounds Optical properties
dc.subject.lcshGallium compounds Electric properties
dc.subject.lcshMetal organic chemical vapor deposition
dc.subject.lcshGallium arsenide semiconductors
dc.subject.lcshOptoelectronic devices Materials
dc.subject.lcshCompound semiconductors Materials
dc.titleGrowth and characterisation of (In)GaAsN alloys for optoelectronic applicationsen_AU
dc.typeThesis (PhD)en_AU
dcterms.valid2004en_AU
local.description.notesThesis (Ph.D.)--Australian National University, 2004
local.identifier.doi10.25911/5d626d7deff55
local.mintdoimint
local.type.degreeDoctor of Philosophy (PhD)en_AU

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