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Quantum well intermixing in (In)GaAs/(A1)GaAs materials and devices

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dc.contributor.authorFu, Lan
dc.date.accessioned2018-09-11T06:52:08Z
dc.date.available2018-09-11T06:52:08Z
dc.date.copyright2001
dc.date.issued2001
dc.date.updated2018-08-31T00:11:50Z
dc.format.extentxi, 186 leaves
dc.identifier.otherb2102034
dc.identifier.urihttp://hdl.handle.net/1885/147350
dc.language.isoen_AUen_AU
dc.subject.lccQC611.8.G3F8 2001
dc.subject.lcshOptoelectronic devices
dc.subject.lcshIon implantation
dc.subject.lcshQuantum wells
dc.titleQuantum well intermixing in (In)GaAs/(A1)GaAs materials and devicesen_AU
dc.typeThesis (PhD)en_AU
dcterms.valid2001en_AU
local.description.notesThesis (Ph.D.)--Australian National University, 2001
local.identifier.doi10.25911/5d626f4029f87
local.mintdoimint
local.type.degreeDoctor of Philosophy (PhD)en_AU

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