Structural Modifications of Silicon-implanted GaAs Induced by the Athermal Annealing Technique
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Qadri, S B; Yousuf, M; Kendziora, C A; Nachumi, B; Fischer, R; Grun, J; Rao, Mulpuri V; Tucker, J; Siddiqui, S; Ridgway, Mark C
Description
We have used high-resolution X-ray diffraction and Raman spectroscopy to investigate structural modifications inside and outside the focal region of Si-implanted GaAs samples that have been irradiated at high power by a focused short-pulse laser. Si atoms implanted into the GaAs matrix generate exciton-induced local lattice expansion, resulting in a satellite on the lower-angle side of the Bragg peak. After the laser pulse irradiation, surface features inside and outside the focal spot suggest...[Show more]
dc.contributor.author | Qadri, S B | |
---|---|---|
dc.contributor.author | Yousuf, M | |
dc.contributor.author | Kendziora, C A | |
dc.contributor.author | Nachumi, B | |
dc.contributor.author | Fischer, R | |
dc.contributor.author | Grun, J | |
dc.contributor.author | Rao, Mulpuri V | |
dc.contributor.author | Tucker, J | |
dc.contributor.author | Siddiqui, S | |
dc.contributor.author | Ridgway, Mark C | |
dc.date.accessioned | 2015-12-13T23:07:32Z | |
dc.date.available | 2015-12-13T23:07:32Z | |
dc.identifier.issn | 0947-8396 | |
dc.identifier.uri | http://hdl.handle.net/1885/86250 | |
dc.description.abstract | We have used high-resolution X-ray diffraction and Raman spectroscopy to investigate structural modifications inside and outside the focal region of Si-implanted GaAs samples that have been irradiated at high power by a focused short-pulse laser. Si atoms implanted into the GaAs matrix generate exciton-induced local lattice expansion, resulting in a satellite on the lower-angle side of the Bragg peak. After the laser pulse irradiation, surface features inside and outside the focal spot suggest the presence of Bernard convection cells, indicating that a rapid melting and re-crystallization has taken place. Moreover, the laser irradiation induces a compressive strain inside the focal spot, since the satellite appears on the higher-angle side of the Bragg peak. The stress maximizes at the center of the focal spot and extends far outside the irradiated area (approximately 2.5-mm away from the bull's eye), suggesting the propagation of a laser-induced mechanical wave. The maximum compressive stress inside the focal spot corresponds to 2.7 GPa. Raman spectra inside the focal spot resemble that of pristine GaAs, indicating that rapid melting has introduced significant heterogeneity, with zones of high and low Si concentration. X-ray measurements indicate that areas inside the focal spot and annealed areas outside of the focal spot contain overtones of a minor tetragonal distortion of the lattice, consistent with the observed relaxation of Raman selection rules when compared with the parent zinc-blende structure. | |
dc.publisher | Springer | |
dc.source | Applied Physics A: Materials Science and Processing | |
dc.subject | Keywords: Annealing; Laser beam effects; Mechanical waves; Melting; Recrystallization (metallurgy); Semiconducting silicon; X ray diffraction analysis; Bragg peaks; Lattice expansion; Structural modifications; Thermal annealing technique; Semiconducting gallium | |
dc.title | Structural Modifications of Silicon-implanted GaAs Induced by the Athermal Annealing Technique | |
dc.type | Journal article | |
local.description.notes | Imported from ARIES | |
local.description.refereed | Yes | |
local.identifier.citationvolume | 79 | |
dc.date.issued | 2004 | |
local.identifier.absfor | 090699 - Electrical and Electronic Engineering not elsewhere classified | |
local.identifier.ariespublication | MigratedxPub15066 | |
local.type.status | Published Version | |
local.contributor.affiliation | Qadri, S B, US Navy | |
local.contributor.affiliation | Yousuf, M, George Washington University | |
local.contributor.affiliation | Kendziora, C A, US Navy | |
local.contributor.affiliation | Nachumi, B, US Navy | |
local.contributor.affiliation | Fischer, R, US Navy | |
local.contributor.affiliation | Grun, J, US Navy | |
local.contributor.affiliation | Rao, Mulpuri V, George Mason University | |
local.contributor.affiliation | Tucker, J, George Mason University | |
local.contributor.affiliation | Siddiqui, S, Thomas Jefferson High School for Science and Technology | |
local.contributor.affiliation | Ridgway, Mark C, College of Physical and Mathematical Sciences, ANU | |
local.bibliographicCitation.startpage | 1971 | |
local.bibliographicCitation.lastpage | 1977 | |
local.identifier.doi | 10.1007/s00339-003-2174-9 | |
dc.date.updated | 2016-02-24T09:47:20Z | |
local.identifier.scopusID | 2-s2.0-6344276766 | |
Collections | ANU Research Publications |
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