In 0.5 Ga 0.5 As/GaAs Quantum Dot Infrared Photodetectors Grown by Metal-Organic Chemical Vapor Deposition

Fu, Lan; Lever McGowan, Penelope; Stewart Sears, Kalista; Jagadish, Chennupati; Tan, Hark Hoe

doi:10.1109/LED.2005.853635

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In 0.5 Ga 0.5 As/GaAs Quantum Dot Infrared Photodetectors Grown by Metal-Organic Chemical Vapor Deposition

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Fu, Lan; Lever McGowan, Penelope; Stewart Sears, Kalista; Jagadish, Chennupati; Tan, Hark Hoe

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We report the growth by low-pressure metal-organic chemical vapor deposition, fabrication, and characterization of ten-layer In0.5 Ga0.5 As/GaAs quantum dot infrared photodetectors. Normal incidence photoresponse of the detector was obtained at 5.9 μm. T

Collections	ANU Research Publications
Date published:	2005
Type:	Journal article
URI:	http://hdl.handle.net/1885/84152
Source:	IEEE Electron Device Letters
DOI:	10.1109/LED.2005.853635

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In 0.5 Ga 0.5 As/GaAs Quantum Dot Infrared Photodetectors Grown by Metal-Organic Chemical Vapor Deposition

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