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In 0.5 Ga 0.5 As/GaAs Quantum Dot Infrared Photodetectors Grown by Metal-Organic Chemical Vapor Deposition

Fu, Lan; Lever McGowan, Penelope; Stewart Sears, Kalista; Jagadish, Chennupati; Tan, Hark Hoe


We report the growth by low-pressure metal-organic chemical vapor deposition, fabrication, and characterization of ten-layer In0.5 Ga0.5 As/GaAs quantum dot infrared photodetectors. Normal incidence photoresponse of the detector was obtained at 5.9 μm. T

CollectionsANU Research Publications
Date published: 2005
Type: Journal article
Source: IEEE Electron Device Letters
DOI: 10.1109/LED.2005.853635


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