Can insulating the gates lead us to stable modulation-doped hole quantum devices?
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Waddington, D. E. J.; Burke, Anthony; Fricke, S; Jagadish, Chennupati; Hamilton, Alexander Rudolf; Trunov, K; Reuter, D; Wieck, Andreas Dirk; Micolich, Adam Paul; Tan, Hark Hoe
Description
We have developed a strategy for the easy fabrication of quantum devices on AlGaAs/GaAs heterostructures featuring gates insulated from the heterostructure surface by a thin oxide layer deposited by atomic layer deposition. We will present the results of
| Collections | ANU Research Publications |
|---|---|
| Date published: | 2010 |
| Type: | Conference paper |
| URI: | http://hdl.handle.net/1885/83589 |
| Source: | Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD |
| DOI: | 10.1109/COMMAD.2010.5699738 |
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| File | Description | Size | Format | Image |
|---|---|---|---|---|
| 01_Waddington_Can_insulating_the_gates_lead_2010.pdf | 583.79 kB | Adobe PDF | Request a copy |
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