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Can insulating the gates lead us to stable modulation-doped hole quantum devices?

Waddington, D. E. J.; Burke, Anthony; Fricke, S; Jagadish, Chennupati; Hamilton, Alexander Rudolf; Trunov, K; Reuter, D; Wieck, Andreas Dirk; Micolich, Adam Paul; Tan, Hark Hoe


We have developed a strategy for the easy fabrication of quantum devices on AlGaAs/GaAs heterostructures featuring gates insulated from the heterostructure surface by a thin oxide layer deposited by atomic layer deposition. We will present the results of

CollectionsANU Research Publications
Date published: 2010
Type: Conference paper
Source: Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD
DOI: 10.1109/COMMAD.2010.5699738


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