Can insulating the gates lead us to stable modulation-doped hole quantum devices?
We have developed a strategy for the easy fabrication of quantum devices on AlGaAs/GaAs heterostructures featuring gates insulated from the heterostructure surface by a thin oxide layer deposited by atomic layer deposition. We will present the results of
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|Source:||Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD|
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