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InGaAs Quantum Dots Grown with GaP Strain Compensation Layers

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Lever McGowan, Penelope; Jagadish, Chennupati; Tan, Hark Hoe

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The use of GaP as a strain compensation layer was studied. The GaP layers were in tensile strain with respect to GaAs, with a lattice mismatch of 4%, whereas the In0.5Ga0.5As dots were in compressive strain. The samples were grown using a low-pressure horizontal flow metalorganic chemical vapor deposition (MOCVD) reactor. It was found that the density of dots in the top layer of the stack is increased as the GaP layer is deposited closer to the dot layer.

dc.contributor.authorLever McGowan, Penelope
dc.contributor.authorJagadish, Chennupati
dc.contributor.authorTan, Hark Hoe
dc.date.accessioned2015-12-13T22:37:30Z
dc.identifier.issn0021-8979
dc.identifier.urihttp://hdl.handle.net/1885/77128
dc.description.abstractThe use of GaP as a strain compensation layer was studied. The GaP layers were in tensile strain with respect to GaAs, with a lattice mismatch of 4%, whereas the In0.5Ga0.5As dots were in compressive strain. The samples were grown using a low-pressure horizontal flow metalorganic chemical vapor deposition (MOCVD) reactor. It was found that the density of dots in the top layer of the stack is increased as the GaP layer is deposited closer to the dot layer.
dc.publisherAmerican Institute of Physics (AIP)
dc.sourceJournal of Applied Physics
dc.subjectKeywords: Annealing; Atomic force microscopy; Interdiffusion (solids); Metallorganic chemical vapor deposition; Nucleation; Photodetectors; Photoluminescence; Semiconducting gallium compounds; Semiconducting indium gallium arsenide; Strain; Surface roughness; Therm
dc.titleInGaAs Quantum Dots Grown with GaP Strain Compensation Layers
dc.typeJournal article
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.citationvolume95
dc.date.issued2004
local.identifier.absfor100799 - Nanotechnology not elsewhere classified
local.identifier.absfor091299 - Materials Engineering not elsewhere classified
local.identifier.ariespublicationMigratedxPub6013
local.type.statusPublished Version
local.contributor.affiliationLever McGowan, Penelope, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationTan, Hoe Hark, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationJagadish, Chennupati, College of Physical and Mathematical Sciences, ANU
local.description.embargo2037-12-31
local.bibliographicCitation.issue10
local.bibliographicCitation.startpage5710
local.bibliographicCitation.lastpage5714
local.identifier.doi10.1063/1.1707230
dc.date.updated2015-12-11T09:36:59Z
local.identifier.scopusID2-s2.0-2942521387
CollectionsANU Research Publications

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