Cheylan, S; Elliman, Robert
The effect of H passivation on the PL emission of Si nanocrystals produced in silica by ion-implantion and annealing is shown to depend on the implant fluence. At low fluences, where the nanocrystals are small, passivation causes an enhancement of the emission intensity that is uniform over the full spectral range and therefore appears to be independent of nanocrystal size. For higher fluences, where the average size and size distribution of the nanocrystals are larger, the enhancement occurs...[Show more]
Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.