Damp and dry heat degradation of thermal oxide passivation of p + silicon
Thermal SiO2 passivates both moderately and heavily doped silicon surfaces irrespective of the dopant type, which is advantageous in high-efficiency solar cell designs. Commercial photovoltaic cells are submitted to accelerated ageing tests, such as damp-heat exposure, to ensure they maintain their performance for at least 20 yr. We find damp-heat exposure causes a severe and rapid degradation of thermal SiO2 passivation on p + silicon surfaces. The reaction is so severe that the...[Show more]
|Collections||ANU Research Publications|
|Source:||Journal of Applied Physics|
|Access Rights:||Open Access|
|01_Thomson_Damp_and_dry_heat_degradation_2014.pdf||736.24 kB||Adobe PDF|
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