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Damp and dry heat degradation of thermal oxide passivation of p + silicon

Thomson, Andrew; Gardner, Matthew; McIntosh, Keith; Shalav, Avi; Bullock, James

Description

Thermal SiO2 passivates both moderately and heavily doped silicon surfaces irrespective of the dopant type, which is advantageous in high-efficiency solar cell designs. Commercial photovoltaic cells are submitted to accelerated ageing tests, such as damp-heat exposure, to ensure they maintain their performance for at least 20 yr. We find damp-heat exposure causes a severe and rapid degradation of thermal SiO2 passivation on p + silicon surfaces. The reaction is so severe that the...[Show more]

CollectionsANU Research Publications
Date published: 2014
Type: Journal article
URI: http://hdl.handle.net/1885/69890
Source: Journal of Applied Physics
DOI: 10.1063/1.4869057

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