Damp and dry heat degradation of thermal oxide passivation of p + silicon
-
Altmetric Citations
Thomson, Andrew; Gardner, Matthew; McIntosh, Keith; Shalav, Avi; Bullock, James
Description
Thermal SiO2 passivates both moderately and heavily doped silicon surfaces irrespective of the dopant type, which is advantageous in high-efficiency solar cell designs. Commercial photovoltaic cells are submitted to accelerated ageing tests, such as damp-heat exposure, to ensure they maintain their performance for at least 20 yr. We find damp-heat exposure causes a severe and rapid degradation of thermal SiO2 passivation on p + silicon surfaces. The reaction is so severe that the...[Show more]
Collections | ANU Research Publications |
---|---|
Date published: | 2014 |
Type: | Journal article |
URI: | http://hdl.handle.net/1885/69890 |
Source: | Journal of Applied Physics |
DOI: | 10.1063/1.4869057 |
Access Rights: | Open Access |
Download
File | Description | Size | Format | Image |
---|---|---|---|---|
01_Thomson_Damp_and_dry_heat_degradation_2014.pdf | 736.24 kB | Adobe PDF |
Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.
Updated: 17 November 2022/ Responsible Officer: University Librarian/ Page Contact: Library Systems & Web Coordinator