III-V compound semiconductor nanowires for optoelectronic devices
We review various III-V compound semiconductor nanowires grown by metalorganic chemical vapor deposition. Transmission and scanning electron microscopy, micro-photoluminescence and micro-Raman spectroscopy have been used to understand the crystal structure, light emission and band structure.
|Collections||ANU Research Publications|
|Source:||Proceedings of the International Quantum Electronics Conference and Conference on Lasers and Electro-Optics Pacific Rim 2011|
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