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Growth and properties of III-V compound semiconductor heterostructure nanowires

Gao, Qiang; Jackson, Howard E; Smith, Leigh M; Yarrison-Rice, Jan M; Zou, Jin; Jagadish, Chennupati; Tan, Hark Hoe


We review various GaAs-based axial and radial nanowire heterostructures grown on (1 1 1)B GaAs substrates by metal organic chemical vapor deposition via vapor-liquid-solid mechanism. Transmission electron microscopy, time-resolved photoluminescence and micro-Raman spectroscopy have been used to understand the crystal structure, non-radiative surface and bulk defects, carrier lifetime and strain effects on the bandgap energy.

CollectionsANU Research Publications
Date published: 2011
Type: Journal article
Source: Semiconductor Science and Technology
DOI: 10.1088/0268-1242/26/1/014035


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