Growth and properties of III-V compound semiconductor heterostructure nanowires
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Gao, Qiang; Jackson, Howard E; Smith, Leigh M; Yarrison-Rice, Jan M; Zou, Jin; Jagadish, Chennupati; Tan, Hark Hoe
Description
We review various GaAs-based axial and radial nanowire heterostructures grown on (1 1 1)B GaAs substrates by metal organic chemical vapor deposition via vapor-liquid-solid mechanism. Transmission electron microscopy, time-resolved photoluminescence and micro-Raman spectroscopy have been used to understand the crystal structure, non-radiative surface and bulk defects, carrier lifetime and strain effects on the bandgap energy.
Collections | ANU Research Publications |
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Date published: | 2011 |
Type: | Journal article |
URI: | http://hdl.handle.net/1885/66574 |
Source: | Semiconductor Science and Technology |
DOI: | 10.1088/0268-1242/26/1/014035 |
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01_Gao_Growth_and_properties_of_III-V_2011.pdf | 1.57 MB | Adobe PDF |
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