Bias-selective dual-operation-mode ultraviolet schottky-barrier photodetectors fabricated on high-resistivity homoepitaxial GaN
We demonstrate a dual-operation-mode ultraviolet (UV) Schottky-barrier photodetector (PD) fabricated on high-resistivity GaN homoepitaxial layer with low defect density. The undoped GaN active layer is grown by metal-organic chemical vapor deposition on a conductive bulk GaN substrate. Under reverse and zero bias, the PD works in depletion mode with low dark current and high UV/visible rejection ratio. Under forward bias, the PD works alternatively in photoconductive mode, which exhibits high...[Show more]
|Collections||ANU Research Publications|
|Source:||IEEE Photonics Technology Letters|
|01_Xie_Bias-selective_2012.pdf||655.63 kB||Adobe PDF||Request a copy|
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