Bias-selective dual-operation-mode ultraviolet schottky-barrier photodetectors fabricated on high-resistivity homoepitaxial GaN
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Xie, Feng; Lu, Hai; Chen, Dunjun; Ren, Fang-Fang; Zhang, R.; Zheng, Youdou
Description
We demonstrate a dual-operation-mode ultraviolet (UV) Schottky-barrier photodetector (PD) fabricated on high-resistivity GaN homoepitaxial layer with low defect density. The undoped GaN active layer is grown by metal-organic chemical vapor deposition on a conductive bulk GaN substrate. Under reverse and zero bias, the PD works in depletion mode with low dark current and high UV/visible rejection ratio. Under forward bias, the PD works alternatively in photoconductive mode, which exhibits high...[Show more]
Collections | ANU Research Publications |
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Date published: | 2012 |
Type: | Journal article |
URI: | http://hdl.handle.net/1885/62633 |
Source: | IEEE Photonics Technology Letters |
DOI: | 10.1109/LPT.2012.2222022 |
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01_Xie_Bias-selective_2012.pdf | 655.63 kB | Adobe PDF |
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