Sun, M.H.; Joyce, Hannah J; Gao, Qiang; Jagadish, Chennupati; Ning, C.Z.; Tan, Hark Hoe
Surface states in semiconductor nanowires (NWs) are detrimental to the NW optical and electronic properties and to their light emission-based applications, due to the large surface-to-volume ratio of NWs and the congregation of defects states near surfaces. In this paper, we demonstrated an effective approach to eliminate surface states in InAs NWs of zinc-blende (ZB) and wurtzite (WZ) structures and a dramatic recovery of band edge emission through surface passivation with organic sulfide...[Show more]
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